Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
10.4 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
10.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
23 nC @ 5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Width
7.67mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.39mm
Izcelsmes valsts
China
Produkta apraksts
P-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,866
Katrs (Paka ir 2) (bez PVN)
€ 1,048
Katrs (Paka ir 2) (Ieskaitot PVN)
Standarts
2
€ 0,866
Katrs (Paka ir 2) (bez PVN)
€ 1,048
Katrs (Paka ir 2) (Ieskaitot PVN)
Standarts
2
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
2 - 24 | € 0,866 | € 1,73 |
26+ | € 0,588 | € 1,18 |
Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
10.4 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
10.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
23 nC @ 5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Width
7.67mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.39mm
Izcelsmes valsts
China
Produkta apraksts