P-Channel MOSFET, 230 mA, 100 V, 3-Pin E-Line Diodes Inc ZVP2110A

RS noliktavas nr.: 157-4580PRažotājs: DiodesZetexRažotāja kods: ZVP2110A
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Specifikācija

Channel Type

P

Maximum Continuous Drain Current

230 mA

Maximum Drain Source Voltage

100 V

Package Type

E-Line

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

700 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

4.77mm

Width

2.41mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

4.01mm

Produkta apraksts

P-Channel MOSFET, 100V to 450V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,669

Katrs (tiek piegadats Lente) (bez PVN)

€ 0,809

Katrs (tiek piegadats Lente) (Ieskaitot PVN)

P-Channel MOSFET, 230 mA, 100 V, 3-Pin E-Line Diodes Inc ZVP2110A
Izvēlēties iepakojuma veidu

€ 0,669

Katrs (tiek piegadats Lente) (bez PVN)

€ 0,809

Katrs (tiek piegadats Lente) (Ieskaitot PVN)

P-Channel MOSFET, 230 mA, 100 V, 3-Pin E-Line Diodes Inc ZVP2110A
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Lente
50 - 95€ 0,669€ 3,34
100 - 495€ 0,518€ 2,59
500 - 995€ 0,455€ 2,28
1000+€ 0,413€ 2,06

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

230 mA

Maximum Drain Source Voltage

100 V

Package Type

E-Line

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

700 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

4.77mm

Width

2.41mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

4.01mm

Produkta apraksts

P-Channel MOSFET, 100V to 450V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more