P-Channel MOSFET, 55 A, 40 V, 3-Pin DPAK Diodes Inc DMPH4013SK3-13

RS noliktavas nr.: 182-7255PRažotājs: DiodesZetexRažotāja kods: DMPH4013SK3-13
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Specifikācija

Channel Type

P

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

6.2mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.7mm

Typical Gate Charge @ Vgs

67 nC @ 10V

Height

2.26mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

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Noliktavas stāvoklis patreiz nav pieejams

€ 0,415

Katrs (tiek piegadats Rulli) (bez PVN)

€ 0,502

Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

P-Channel MOSFET, 55 A, 40 V, 3-Pin DPAK Diodes Inc DMPH4013SK3-13
Izvēlēties iepakojuma veidu

€ 0,415

Katrs (tiek piegadats Rulli) (bez PVN)

€ 0,502

Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

P-Channel MOSFET, 55 A, 40 V, 3-Pin DPAK Diodes Inc DMPH4013SK3-13
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

6.2mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.7mm

Typical Gate Charge @ Vgs

67 nC @ 10V

Height

2.26mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more