P-Channel MOSFET, 460 mA, 20 V, 3-Pin SOT-523 Diodes Inc DMG1013T-7

RS noliktavas nr.: 751-4076PRažotājs: DiodesZetexRažotāja kods: DMG1013T-7
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Specifikācija

Channel Type

P

Maximum Continuous Drain Current

460 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-523 (SC-89)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

270 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-6 V, +6 V

Typical Gate Charge @ Vgs

0.58 nC @ 4.5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

1.7mm

Width

0.85mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.8mm

Izcelsmes valsts

China

Produkta apraksts

P-Channel MOSFET, 12V to 25V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,036

Katrs (tiek piegadats Rulli) (bez PVN)

€ 0,044

Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

P-Channel MOSFET, 460 mA, 20 V, 3-Pin SOT-523 Diodes Inc DMG1013T-7
Izvēlēties iepakojuma veidu

€ 0,036

Katrs (tiek piegadats Rulli) (bez PVN)

€ 0,044

Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

P-Channel MOSFET, 460 mA, 20 V, 3-Pin SOT-523 Diodes Inc DMG1013T-7
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

P

Maximum Continuous Drain Current

460 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-523 (SC-89)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

270 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-6 V, +6 V

Typical Gate Charge @ Vgs

0.58 nC @ 4.5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

1.7mm

Width

0.85mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.8mm

Izcelsmes valsts

China

Produkta apraksts

P-Channel MOSFET, 12V to 25V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more