Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
460 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-523 (SC-89)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
270 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +6 V
Typical Gate Charge @ Vgs
0.58 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1.7mm
Width
0.85mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.8mm
Izcelsmes valsts
China
Produkta apraksts
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,036
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,044
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
100
€ 0,036
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,044
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
100
Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
460 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-523 (SC-89)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
270 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-6 V, +6 V
Typical Gate Charge @ Vgs
0.58 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
1.7mm
Width
0.85mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
0.8mm
Izcelsmes valsts
China
Produkta apraksts