Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
15 A, 21 A
Maximum Drain Source Voltage
30 V
Package Type
PDI3333
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17 mΩ, 38 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2 V, 2.4V
Minimum Gate Threshold Voltage
1.2 V, 1.4V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.15mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
3.15mm
Typical Gate Charge @ Vgs
19.7 nC @ 15 V, 21 nC @ 15 V
Height
0.8mm
Series
DMC3016LDV
Minimum Operating Temperature
-55 °C
Produkta apraksts
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,801
Katrs (Paka ir 20) (bez PVN)
€ 0,969
Katrs (Paka ir 20) (Ieskaitot PVN)
20
€ 0,801
Katrs (Paka ir 20) (bez PVN)
€ 0,969
Katrs (Paka ir 20) (Ieskaitot PVN)
20
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
20 - 80 | € 0,801 | € 16,02 |
100 - 480 | € 0,706 | € 14,12 |
500 - 980 | € 0,687 | € 13,74 |
1000 - 1980 | € 0,669 | € 13,38 |
2000+ | € 0,653 | € 13,06 |
Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
15 A, 21 A
Maximum Drain Source Voltage
30 V
Package Type
PDI3333
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17 mΩ, 38 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2 V, 2.4V
Minimum Gate Threshold Voltage
1.2 V, 1.4V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.15mm
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
3.15mm
Typical Gate Charge @ Vgs
19.7 nC @ 15 V, 21 nC @ 15 V
Height
0.8mm
Series
DMC3016LDV
Minimum Operating Temperature
-55 °C
Produkta apraksts