Dual N/P-Channel-Channel MOSFET, 15 A, 21 A, 30 V, 8-Pin PDI3333 Diodes Inc DMC3016LDV-7
Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
15 A, 21 A
Maximum Drain Source Voltage
30 V
Series
DMC3016LDV
Package Type
PDI3333
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17 mΩ, 38 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2 V, 2.4V
Minimum Gate Threshold Voltage
1.2 V, 1.4V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.15mm
Number of Elements per Chip
2
Length
3.15mm
Typical Gate Charge @ Vgs
19.7 nC @ 15 V, 21 nC @ 15 V
Maximum Operating Temperature
+150 °C
Height
0.8mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,574
Katrs (Paka ir 20) (bez PVN)
€ 0,695
Katrs (Paka ir 20) (Ieskaitot PVN)
Standarts
20
€ 0,574
Katrs (Paka ir 20) (bez PVN)
€ 0,695
Katrs (Paka ir 20) (Ieskaitot PVN)
Standarts
20
Pirkt iepakojumos
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 20 - 80 | € 0,574 | € 11,48 |
| 100 - 480 | € 0,505 | € 10,10 |
| 500 - 980 | € 0,492 | € 9,84 |
| 1000 - 1980 | € 0,479 | € 9,58 |
| 2000+ | € 0,468 | € 9,36 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
15 A, 21 A
Maximum Drain Source Voltage
30 V
Series
DMC3016LDV
Package Type
PDI3333
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17 mΩ, 38 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2 V, 2.4V
Minimum Gate Threshold Voltage
1.2 V, 1.4V
Maximum Power Dissipation
1.8 W
Transistor Configuration
Dual Base
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.15mm
Number of Elements per Chip
2
Length
3.15mm
Typical Gate Charge @ Vgs
19.7 nC @ 15 V, 21 nC @ 15 V
Maximum Operating Temperature
+150 °C
Height
0.8mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products