N-Channel MOSFET, 170 mA, 100 V, 3-Pin SOT-23 Diodes Inc BSS123-7-F

RS noliktavas nr.: 738-4926PRažotājs: DiodesZetexRažotāja kods: BSS123-7-F
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

170 mA

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

3mm

Number of Elements per Chip

1

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.1mm

Izcelsmes valsts

China

Produkta apraksts

N-Channel MOSFET, 100V to 950V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Noliktavas stāvoklis patreiz nav pieejams

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Noliktavas stāvoklis patreiz nav pieejams

€ 0,022

Katrs (tiek piegadats Rulli) (bez PVN)

€ 0,027

Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

N-Channel MOSFET, 170 mA, 100 V, 3-Pin SOT-23 Diodes Inc BSS123-7-F
Izvēlēties iepakojuma veidu

€ 0,022

Katrs (tiek piegadats Rulli) (bez PVN)

€ 0,027

Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

N-Channel MOSFET, 170 mA, 100 V, 3-Pin SOT-23 Diodes Inc BSS123-7-F
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

170 mA

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Length

3mm

Number of Elements per Chip

1

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.1mm

Izcelsmes valsts

China

Produkta apraksts

N-Channel MOSFET, 100V to 950V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more