Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
170 mA
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Izcelsmes valsts
China
Produkta apraksts
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,276
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,334
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
100
€ 0,276
Katrs (tiek piegadats Rulli) (bez PVN)
€ 0,334
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
100
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
100 - 400 | € 0,276 | € 27,60 |
500 - 900 | € 0,17 | € 17,00 |
1000 - 2400 | € 0,165 | € 16,50 |
2500 - 4900 | € 0,155 | € 15,50 |
5000+ | € 0,146 | € 14,60 |
Tehniskie dokumenti
Specifikācija
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
170 mA
Maximum Drain Source Voltage
100 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Izcelsmes valsts
China
Produkta apraksts