Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
60 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Typical Gate Charge @ Vgs
18 nC @ 5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5mm
Width
6.29mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
3.37mm
Produkta apraksts
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,85
Katrs (bez PVN)
€ 2,24
Katrs (Ieskaitot PVN)
Standarts
1
€ 1,85
Katrs (bez PVN)
€ 2,24
Katrs (Ieskaitot PVN)
Standarts
1
Pirkt iepakojumos
Daudzums | Vienības cena |
---|---|
1 - 9 | € 1,85 |
10 - 49 | € 1,60 |
50 - 99 | € 1,50 |
100 - 249 | € 1,40 |
250+ | € 1,30 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.5 A
Maximum Drain Source Voltage
60 V
Package Type
HVMDIP
Mounting Type
Through Hole
Pin Count
4
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Typical Gate Charge @ Vgs
18 nC @ 5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5mm
Width
6.29mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
3.37mm
Produkta apraksts