N-Channel MOSFET, 59 A, 100 V, 8-Pin SOP Advanced Toshiba TPH8R80ANH

RS noliktavas nr.: 168-7790Ražotājs: ToshibaRažotāja kods: TPH8R80ANH
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Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

59 A

Maximum Drain Source Voltage

100 V

Package Type

SOP Advanced

Series

TPH

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

61 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

5mm

Typical Gate Charge @ Vgs

33 nC @ 10 V

Width

5mm

Number of Elements per Chip

1

Height

0.95mm

Izcelsmes valsts

Japan

Produkta apraksts

MOSFET Transistors, Toshiba

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Noliktavas stāvoklis patreiz nav pieejams

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Noliktavas stāvoklis patreiz nav pieejams

€ 0,985

Katrs (Rulli ir 5000) (bez PVN)

€ 1,192

Katrs (Rulli ir 5000) (Ieskaitot PVN)

N-Channel MOSFET, 59 A, 100 V, 8-Pin SOP Advanced Toshiba TPH8R80ANH

€ 0,985

Katrs (Rulli ir 5000) (bez PVN)

€ 1,192

Katrs (Rulli ir 5000) (Ieskaitot PVN)

N-Channel MOSFET, 59 A, 100 V, 8-Pin SOP Advanced Toshiba TPH8R80ANH
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

59 A

Maximum Drain Source Voltage

100 V

Package Type

SOP Advanced

Series

TPH

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

61 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

5mm

Typical Gate Charge @ Vgs

33 nC @ 10 V

Width

5mm

Number of Elements per Chip

1

Height

0.95mm

Izcelsmes valsts

Japan

Produkta apraksts

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more