Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
59 A
Maximum Drain Source Voltage
100 V
Package Type
SOP Advanced
Series
TPH
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
61 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Width
5mm
Number of Elements per Chip
1
Height
0.95mm
Izcelsmes valsts
Japan
Produkta apraksts
MOSFET Transistors, Toshiba
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,985
Katrs (Rulli ir 5000) (bez PVN)
€ 1,192
Katrs (Rulli ir 5000) (Ieskaitot PVN)
5000
€ 0,985
Katrs (Rulli ir 5000) (bez PVN)
€ 1,192
Katrs (Rulli ir 5000) (Ieskaitot PVN)
5000
Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
59 A
Maximum Drain Source Voltage
100 V
Package Type
SOP Advanced
Series
TPH
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
61 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Width
5mm
Number of Elements per Chip
1
Height
0.95mm
Izcelsmes valsts
Japan
Produkta apraksts