Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
600 V
Package Type
DPAK (TO-252)
Series
DTMOSIV
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
560 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
80 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.6mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Width
6.1mm
Number of Elements per Chip
1
Height
2.3mm
Forward Diode Voltage
1.7V
Izcelsmes valsts
Japan
Produkta apraksts
MOSFET N-channel, TK8 & TK9 Series, Toshiba
MOSFET Transistors, Toshiba
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 11,50
€ 1,15 Katrs (Paka ir 10) (bez PVN)
€ 13,92
€ 1,392 Katrs (Paka ir 10) (Ieskaitot PVN)
10
€ 11,50
€ 1,15 Katrs (Paka ir 10) (bez PVN)
€ 13,92
€ 1,392 Katrs (Paka ir 10) (Ieskaitot PVN)
10
Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
600 V
Package Type
DPAK (TO-252)
Series
DTMOSIV
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
560 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
80 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.6mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Width
6.1mm
Number of Elements per Chip
1
Height
2.3mm
Forward Diode Voltage
1.7V
Izcelsmes valsts
Japan
Produkta apraksts