N-Channel MOSFET, 112 A, 120 V, 3-Pin TO-220 Toshiba TK56E12N1,S1X(S

RS noliktavas nr.: 125-0578Ražotājs: ToshibaRažotāja kods: TK56E12N1,S1X(S
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Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

112 A

Maximum Drain Source Voltage

120 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

168 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.45mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.16mm

Typical Gate Charge @ Vgs

69 nC @ 10 V

Height

15.1mm

Series

U-MOSVIII-H

Forward Diode Voltage

1.2V

Produkta apraksts

MOSFET Transistors, Toshiba

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,825

Katrs (Paka ir 10) (bez PVN)

€ 0,998

Katrs (Paka ir 10) (Ieskaitot PVN)

N-Channel MOSFET, 112 A, 120 V, 3-Pin TO-220 Toshiba TK56E12N1,S1X(S

€ 0,825

Katrs (Paka ir 10) (bez PVN)

€ 0,998

Katrs (Paka ir 10) (Ieskaitot PVN)

N-Channel MOSFET, 112 A, 120 V, 3-Pin TO-220 Toshiba TK56E12N1,S1X(S
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
10 - 40€ 0,825€ 8,25
50 - 90€ 0,742€ 7,42
100+€ 0,691€ 6,91

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

112 A

Maximum Drain Source Voltage

120 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

168 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.45mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.16mm

Typical Gate Charge @ Vgs

69 nC @ 10 V

Height

15.1mm

Series

U-MOSVIII-H

Forward Diode Voltage

1.2V

Produkta apraksts

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more