Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
15.8 A
Maximum Drain Source Voltage
600 V
Series
DTMOSIV
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
230 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
130 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.45mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.16mm
Typical Gate Charge @ Vgs
43 nC @ 10 V
Height
15.1mm
Forward Diode Voltage
1.7V
Izcelsmes valsts
Japan
Produkta apraksts
MOSFET Transistors, Toshiba
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,40
Katrs (Paka ir 5) (bez PVN)
€ 1,694
Katrs (Paka ir 5) (Ieskaitot PVN)
5
€ 1,40
Katrs (Paka ir 5) (bez PVN)
€ 1,694
Katrs (Paka ir 5) (Ieskaitot PVN)
5
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
5 - 20 | € 1,40 | € 7,00 |
25 - 45 | € 0,843 | € 4,22 |
50+ | € 0,772 | € 3,86 |
Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
15.8 A
Maximum Drain Source Voltage
600 V
Series
DTMOSIV
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
230 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
130 W
Maximum Gate Source Voltage
-30 V, +30 V
Width
4.45mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.16mm
Typical Gate Charge @ Vgs
43 nC @ 10 V
Height
15.1mm
Forward Diode Voltage
1.7V
Izcelsmes valsts
Japan
Produkta apraksts