N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220 Toshiba TK16E60W5,S1VX(S

RS noliktavas nr.: 125-0541Ražotājs: ToshibaRažotāja kods: TK16E60W5,S1VX(S
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Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

15.8 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

230 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

130 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.45mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.16mm

Typical Gate Charge @ Vgs

43 nC @ 10 V

Height

15.1mm

Forward Diode Voltage

1.7V

Izcelsmes valsts

Japan

Produkta apraksts

MOSFET Transistors, Toshiba

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Noliktavas stāvoklis patreiz nav pieejams

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Noliktavas stāvoklis patreiz nav pieejams

€ 1,40

Katrs (Paka ir 5) (bez PVN)

€ 1,694

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220 Toshiba TK16E60W5,S1VX(S

€ 1,40

Katrs (Paka ir 5) (bez PVN)

€ 1,694

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220 Toshiba TK16E60W5,S1VX(S
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
5 - 20€ 1,40€ 7,00
25 - 45€ 0,843€ 4,22
50+€ 0,772€ 3,86

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

15.8 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

230 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

130 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.45mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10.16mm

Typical Gate Charge @ Vgs

43 nC @ 10 V

Height

15.1mm

Forward Diode Voltage

1.7V

Izcelsmes valsts

Japan

Produkta apraksts

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more