N-Channel MOSFET, 13.7 A, 650 V, 3-Pin D2PAK Toshiba TK14G65W,RQ(S
Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
13.7 A
Maximum Drain Source Voltage
650 V
Series
DTMOSIV
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
130 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
8.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.35mm
Typical Gate Charge @ Vgs
35 nC @ 10 V
Height
4.46mm
Forward Diode Voltage
1.7V
Izcelsmes valsts
Japan
Produkta apraksts
MOSFET Transistors, Toshiba
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 11,25
€ 2,25 Katrs (Paka ir 5) (bez PVN)
€ 13,61
€ 2,722 Katrs (Paka ir 5) (Ieskaitot PVN)
5
€ 11,25
€ 2,25 Katrs (Paka ir 5) (bez PVN)
€ 13,61
€ 2,722 Katrs (Paka ir 5) (Ieskaitot PVN)
5
Pirkt iepakojumos
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 5 - 20 | € 2,25 | € 11,25 |
| 25 - 45 | € 1,95 | € 9,75 |
| 50 - 245 | € 1,85 | € 9,25 |
| 250 - 495 | € 1,80 | € 9,00 |
| 500+ | € 1,75 | € 8,75 |
Ideate. Create. Collaborate
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
13.7 A
Maximum Drain Source Voltage
650 V
Series
DTMOSIV
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
250 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
130 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
8.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
10.35mm
Typical Gate Charge @ Vgs
35 nC @ 10 V
Height
4.46mm
Forward Diode Voltage
1.7V
Izcelsmes valsts
Japan
Produkta apraksts
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products