P-Channel MOSFET, 5 A, 60 V, 3-Pin PW Mold Toshiba 2SJ668(TE16L,NQ)

RS noliktavas nr.: 415-174Ražotājs: ToshibaRažotāja kods: 2SJ668(TE16L,NQ)
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Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

60 V

Package Type

PW Mold

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

170 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

20 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

15 nC @ 10 V

Number of Elements per Chip

1

Width

5.5mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

6.5mm

Minimum Operating Temperature

-55 °C

Height

2.3mm

Produkta apraksts

MOSFET P-Channel, 2SJ Series, Toshiba

MOSFET Transistors, Toshiba

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,751

Katrs (Paka ir 10) (bez PVN)

€ 0,909

Katrs (Paka ir 10) (Ieskaitot PVN)

P-Channel MOSFET, 5 A, 60 V, 3-Pin PW Mold Toshiba 2SJ668(TE16L,NQ)
Izvēlēties iepakojuma veidu

€ 0,751

Katrs (Paka ir 10) (bez PVN)

€ 0,909

Katrs (Paka ir 10) (Ieskaitot PVN)

P-Channel MOSFET, 5 A, 60 V, 3-Pin PW Mold Toshiba 2SJ668(TE16L,NQ)
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
10 - 40€ 0,751€ 7,51
50 - 190€ 0,586€ 5,86
200 - 490€ 0,51€ 5,10
500 - 990€ 0,481€ 4,81
1000+€ 0,469€ 4,69

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

60 V

Package Type

PW Mold

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

170 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

20 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

15 nC @ 10 V

Number of Elements per Chip

1

Width

5.5mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

6.5mm

Minimum Operating Temperature

-55 °C

Height

2.3mm

Produkta apraksts

MOSFET P-Channel, 2SJ Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more