N-Channel MOSFET, 100 A, 25 V, 8-Pin SON Texas Instruments CSD16413Q5A

RS noliktavas nr.: 827-4798Ražotājs: Texas InstrumentsRažotāja kods: CSD16413Q5A
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

25 V

Package Type

SON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.9V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +16 V

Maximum Operating Temperature

+150 °C

Length

5.8mm

Typical Gate Charge @ Vgs

9 nC @ 4.5 V

Width

5mm

Number of Elements per Chip

1

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.1mm

Series

NexFET

Produkta apraksts

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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Noliktavas stāvoklis patreiz nav pieejams

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Noliktavas stāvoklis patreiz nav pieejams

€ 0,546

Katrs (Paka ir 5) (bez PVN)

€ 0,661

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 100 A, 25 V, 8-Pin SON Texas Instruments CSD16413Q5A
Izvēlēties iepakojuma veidu

€ 0,546

Katrs (Paka ir 5) (bez PVN)

€ 0,661

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 100 A, 25 V, 8-Pin SON Texas Instruments CSD16413Q5A
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

25 V

Package Type

SON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

5.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.9V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +16 V

Maximum Operating Temperature

+150 °C

Length

5.8mm

Typical Gate Charge @ Vgs

9 nC @ 4.5 V

Width

5mm

Number of Elements per Chip

1

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.1mm

Series

NexFET

Produkta apraksts

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more