N-Channel MOSFET, 52 A, 25 V, 8-Pin SON Texas Instruments CSD16412Q5A
Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
52 A
Maximum Drain Source Voltage
25 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.7V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +16 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5.8mm
Typical Gate Charge @ Vgs
2.9 nC @ 4.5 V
Width
5mm
Number of Elements per Chip
1
Height
1.1mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
Malaysia
Produkta apraksts
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,395
Katrs (Rulli ir 2500) (bez PVN)
€ 0,478
Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
€ 0,395
Katrs (Rulli ir 2500) (bez PVN)
€ 0,478
Katrs (Rulli ir 2500) (Ieskaitot PVN)
2500
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
52 A
Maximum Drain Source Voltage
25 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.3V
Minimum Gate Threshold Voltage
1.7V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +16 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
5.8mm
Typical Gate Charge @ Vgs
2.9 nC @ 4.5 V
Width
5mm
Number of Elements per Chip
1
Height
1.1mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
Malaysia
Produkta apraksts
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products