Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
200 V
Series
STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
84 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.4mm
Width
4.6mm
Transistor Material
Si
Minimum Operating Temperature
-50 °C
Height
15.75mm
Produkta apraksts
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 4,35
Katrs (bez PVN)
€ 5,26
Katrs (Ieskaitot PVN)
Standarts
1
€ 4,35
Katrs (bez PVN)
€ 5,26
Katrs (Ieskaitot PVN)
Standarts
1
Pirkt iepakojumos
Daudzums | Vienības cena |
---|---|
1 - 4 | € 4,35 |
5 - 9 | € 4,15 |
10 - 24 | € 3,70 |
25 - 49 | € 3,35 |
50+ | € 3,15 |
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
75 A
Maximum Drain Source Voltage
200 V
Series
STripFET
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
34 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
190 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
84 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.4mm
Width
4.6mm
Transistor Material
Si
Minimum Operating Temperature
-50 °C
Height
15.75mm
Produkta apraksts