N-Channel MOSFET, 80 A, 40 V, 3-Pin DPAK STMicroelectronics STD80N4F6

RS noliktavas nr.: 165-6582Ražotājs: STMicroelectronicsRažotāja kods: STD80N4F6
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Series

DeepGate, STripFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

70 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

36 nC @ 10 V

Width

6.2mm

Number of Elements per Chip

1

Height

2.4mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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€ 0,917

Katrs (Rulli ir 2500) (bez PVN)

€ 1,11

Katrs (Rulli ir 2500) (Ieskaitot PVN)

N-Channel MOSFET, 80 A, 40 V, 3-Pin DPAK STMicroelectronics STD80N4F6

€ 0,917

Katrs (Rulli ir 2500) (bez PVN)

€ 1,11

Katrs (Rulli ir 2500) (Ieskaitot PVN)

N-Channel MOSFET, 80 A, 40 V, 3-Pin DPAK STMicroelectronics STD80N4F6
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Series

DeepGate, STripFET

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

70 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

36 nC @ 10 V

Width

6.2mm

Number of Elements per Chip

1

Height

2.4mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more