N-Channel MOSFET, 120 A, 75 V, 3-Pin D2PAK STMicroelectronics STB140NF75T4

RS noliktavas nr.: 165-7785Ražotājs: STMicroelectronicsRažotāja kods: STB140NF75T4
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

75 V

Series

STripFET F3

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

310 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.4mm

Typical Gate Charge @ Vgs

160 nC @ 10 V

Height

4.6mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Malaysia

Produkta apraksts

N-Channel STripFET™ F3, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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Noliktavas stāvoklis patreiz nav pieejams

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Noliktavas stāvoklis patreiz nav pieejams

€ 1 850,00

€ 1,85 Katrs (Rulli ir 1000) (bez PVN)

€ 2 238,50

€ 2,238 Katrs (Rulli ir 1000) (Ieskaitot PVN)

N-Channel MOSFET, 120 A, 75 V, 3-Pin D2PAK STMicroelectronics STB140NF75T4

€ 1 850,00

€ 1,85 Katrs (Rulli ir 1000) (bez PVN)

€ 2 238,50

€ 2,238 Katrs (Rulli ir 1000) (Ieskaitot PVN)

N-Channel MOSFET, 120 A, 75 V, 3-Pin D2PAK STMicroelectronics STB140NF75T4
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

75 V

Series

STripFET F3

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

310 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

9.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.4mm

Typical Gate Charge @ Vgs

160 nC @ 10 V

Height

4.6mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

Malaysia

Produkta apraksts

N-Channel STripFET™ F3, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more