N-Channel MOSFET, 52 A, 40 V, 4-Pin LFPAK, SOT-669 onsemi NTMYS7D3N04CLTWG

RS noliktavas nr.: 195-2524Ražotājs: onsemiRažotāja kods: NTMYS7D3N04CLTWG
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Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

52 A

Maximum Drain Source Voltage

40 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

12 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

38 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

4.25mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

5mm

Typical Gate Charge @ Vgs

7 nC @ 4.5 V

Height

1.15mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,956

Katrs (Rulli ir 3000) (bez PVN)

€ 1,157

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET, 52 A, 40 V, 4-Pin LFPAK, SOT-669 onsemi NTMYS7D3N04CLTWG

€ 0,956

Katrs (Rulli ir 3000) (bez PVN)

€ 1,157

Katrs (Rulli ir 3000) (Ieskaitot PVN)

N-Channel MOSFET, 52 A, 40 V, 4-Pin LFPAK, SOT-669 onsemi NTMYS7D3N04CLTWG
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

52 A

Maximum Drain Source Voltage

40 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

12 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

38 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

4.25mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

5mm

Typical Gate Charge @ Vgs

7 nC @ 4.5 V

Height

1.15mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more