Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
52 A
Maximum Drain Source Voltage
40 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
12 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
38 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
4.25mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5mm
Typical Gate Charge @ Vgs
7 nC @ 4.5 V
Height
1.15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,956
Katrs (Rulli ir 3000) (bez PVN)
€ 1,157
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
€ 0,956
Katrs (Rulli ir 3000) (bez PVN)
€ 1,157
Katrs (Rulli ir 3000) (Ieskaitot PVN)
3000
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
52 A
Maximum Drain Source Voltage
40 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
12 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
38 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
4.25mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5mm
Typical Gate Charge @ Vgs
7 nC @ 4.5 V
Height
1.15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V