Tehniskie dokumenti
Specifikācija
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
55 V
Package Type
SOT-323 (SC-70)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.3V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.2mm
Typical Gate Charge @ Vgs
1 nC @ 8 V
Height
1mm
Minimum Operating Temperature
-65 °C
Izcelsmes valsts
Hong Kong
Produkta apraksts
N-Channel MOSFET, 40V to 55V
MOSFET Transistors, NXP Semiconductors
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,063
Katrs (Rulli ir 10000) (bez PVN)
€ 0,076
Katrs (Rulli ir 10000) (Ieskaitot PVN)
10000
€ 0,063
Katrs (Rulli ir 10000) (bez PVN)
€ 0,076
Katrs (Rulli ir 10000) (Ieskaitot PVN)
10000
Tehniskie dokumenti
Specifikācija
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
55 V
Package Type
SOT-323 (SC-70)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.3V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
700 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
2.2mm
Typical Gate Charge @ Vgs
1 nC @ 8 V
Height
1mm
Minimum Operating Temperature
-65 °C
Izcelsmes valsts
Hong Kong
Produkta apraksts