N-Channel MOSFET, 33 A, 100 V, 3-Pin TO-220AB Infineon IRF540NPBF

RS noliktavas nr.: 914-8154Ražotājs: InfineonRažotāja kods: IRF540NPBFIMPA: 0
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Tehniskie dokumenti

Specifikācija

Number of Elements per Chip

1

Channel Mode

Enhancement

Channel Type

N

Transistor Material

Si

Pin Count

3

Minimum Operating Temperature

-55 °C

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Configuration

Single

Mounting Type

Through Hole

Minimum Gate Threshold Voltage

2V

Maximum Operating Temperature

+175 °C

Maximum Drain Source Voltage

100 V

Maximum Gate Threshold Voltage

4V

Series

HEXFET

Width

4.69mm

Package Type

TO-220AB

Length

10.54mm

Height

8.77mm

Maximum Power Dissipation

130 W

Maximum Continuous Drain Current

33 A

Maximum Drain Source Resistance

44 mΩ

Typical Gate Charge @ Vgs

71 nC @ 10 V

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,889

Katrs (Paka ir 20) (bez PVN)

€ 1,076

Katrs (Paka ir 20) (Ieskaitot PVN)

N-Channel MOSFET, 33 A, 100 V, 3-Pin TO-220AB Infineon IRF540NPBF
Izvēlēties iepakojuma veidu

€ 0,889

Katrs (Paka ir 20) (bez PVN)

€ 1,076

Katrs (Paka ir 20) (Ieskaitot PVN)

N-Channel MOSFET, 33 A, 100 V, 3-Pin TO-220AB Infineon IRF540NPBF
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
20 - 80€ 0,889€ 17,78
100 - 180€ 0,694€ 13,88
200 - 480€ 0,65€ 13,00
500 - 980€ 0,604€ 12,08
1000+€ 0,56€ 11,20

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Number of Elements per Chip

1

Channel Mode

Enhancement

Channel Type

N

Transistor Material

Si

Pin Count

3

Minimum Operating Temperature

-55 °C

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Configuration

Single

Mounting Type

Through Hole

Minimum Gate Threshold Voltage

2V

Maximum Operating Temperature

+175 °C

Maximum Drain Source Voltage

100 V

Maximum Gate Threshold Voltage

4V

Series

HEXFET

Width

4.69mm

Package Type

TO-220AB

Length

10.54mm

Height

8.77mm

Maximum Power Dissipation

130 W

Maximum Continuous Drain Current

33 A

Maximum Drain Source Resistance

44 mΩ

Typical Gate Charge @ Vgs

71 nC @ 10 V

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more