Silicon N-Channel MOSFET, 44 A, 300 V, 3-Pin TO-220 Infineon IPP410N30NAKSA1

RS noliktavas nr.: 222-4695PRažotājs: InfineonRažotāja kods: IPP410N30NAKSA1
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

44 A

Maximum Drain Source Voltage

300 V

Series

CoolMOS™

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.041 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Silicon

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Noliktavas stāvoklis patreiz nav pieejams

€ 3,95

Katrs (tiek piegadats Tubina) (bez PVN)

€ 4,78

Katrs (tiek piegadats Tubina) (Ieskaitot PVN)

Silicon N-Channel MOSFET, 44 A, 300 V, 3-Pin TO-220 Infineon IPP410N30NAKSA1
Izvēlēties iepakojuma veidu

€ 3,95

Katrs (tiek piegadats Tubina) (bez PVN)

€ 4,78

Katrs (tiek piegadats Tubina) (Ieskaitot PVN)

Silicon N-Channel MOSFET, 44 A, 300 V, 3-Pin TO-220 Infineon IPP410N30NAKSA1
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

44 A

Maximum Drain Source Voltage

300 V

Series

CoolMOS™

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.041 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Silicon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more