N-Channel MOSFET, 176 A, 100 V, 3-Pin TO 263 Infineon IPB020N10N5ATMA1

RS noliktavas nr.: 171-1955Ražotājs: InfineonRažotāja kods: IPB020N10N5ATMA1
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

176 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™ 5

Package Type

TO 263

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

11.05mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.31mm

Typical Gate Charge @ Vgs

168 nC @ 10 V

Height

4.57mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

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Noliktavas stāvoklis patreiz nav pieejams

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Noliktavas stāvoklis patreiz nav pieejams

€ 3,25

Katrs (Paka ir 5) (bez PVN)

€ 3,932

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 176 A, 100 V, 3-Pin TO 263 Infineon IPB020N10N5ATMA1
Izvēlēties iepakojuma veidu

€ 3,25

Katrs (Paka ir 5) (bez PVN)

€ 3,932

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 176 A, 100 V, 3-Pin TO 263 Infineon IPB020N10N5ATMA1
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

176 A

Maximum Drain Source Voltage

100 V

Series

OptiMOS™ 5

Package Type

TO 263

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

11.05mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.31mm

Typical Gate Charge @ Vgs

168 nC @ 10 V

Height

4.57mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more