Tehniskie dokumenti
Specifikācija
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
N
Pin Count
3 + Tab
Minimum Operating Temperature
-55 °C
Transistor Configuration
Single
Forward Diode Voltage
0.9V
Mounting Type
Through Hole
Minimum Gate Threshold Voltage
2.5V
Maximum Operating Temperature
+150 °C
Maximum Gate Threshold Voltage
3.5V
Maximum Drain Source Voltage
800 V
Maximum Gate Source Voltage
+30 V
Maximum Continuous Drain Current
4 A
Maximum Power Dissipation
24 W
Width
4.9mm
Series
CoolMOS P7
Package Type
TO-220FP
Length
10.65mm
Height
16.15mm
Maximum Drain Source Resistance
3.1 Ω
Brand
InfineonTypical Gate Charge @ Vgs
10 nC @ 10 V
Izcelsmes valsts
China
Produkta apraksts
Motor Driven
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,30
Katrs (Paka ir 5) (bez PVN)
€ 1,573
Katrs (Paka ir 5) (Ieskaitot PVN)
5
€ 1,30
Katrs (Paka ir 5) (bez PVN)
€ 1,573
Katrs (Paka ir 5) (Ieskaitot PVN)
5
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
5 - 20 | € 1,30 | € 6,50 |
25 - 120 | € 1,05 | € 5,25 |
125 - 245 | € 0,808 | € 4,04 |
250+ | € 0,767 | € 3,84 |
Tehniskie dokumenti
Specifikācija
Number of Elements per Chip
1
Channel Mode
Enhancement
Channel Type
N
Pin Count
3 + Tab
Minimum Operating Temperature
-55 °C
Transistor Configuration
Single
Forward Diode Voltage
0.9V
Mounting Type
Through Hole
Minimum Gate Threshold Voltage
2.5V
Maximum Operating Temperature
+150 °C
Maximum Gate Threshold Voltage
3.5V
Maximum Drain Source Voltage
800 V
Maximum Gate Source Voltage
+30 V
Maximum Continuous Drain Current
4 A
Maximum Power Dissipation
24 W
Width
4.9mm
Series
CoolMOS P7
Package Type
TO-220FP
Length
10.65mm
Height
16.15mm
Maximum Drain Source Resistance
3.1 Ω
Brand
InfineonTypical Gate Charge @ Vgs
10 nC @ 10 V
Izcelsmes valsts
China
Produkta apraksts