N-channel MOSFET,IRF630 9A 200V 50pcs
Tehniskie dokumenti
Specifikācija
Channel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
74 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
10.4mm
Height
9.15mm
Width
4.6mm
Produkta apraksts
Molex BEAU Series Power Connectors
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
P.O.A.
1
P.O.A.
1
Tehniskie dokumenti
Specifikācija
Channel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
74 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
10.4mm
Height
9.15mm
Width
4.6mm
Produkta apraksts
Molex BEAU Series Power Connectors