STMicroelectronics MDmesh M2 N-Channel MOSFET, 7.5 A, 650 V, 3-Pin TO-220 STP10N60M2

RS noliktavas nr.: 786-3763Ražotājs: STMicroelectronicsRažotāja kods: STP10N60M2
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

7.5 A

Maximum Drain Source Voltage

650 V

Series

MDmesh M2

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

85 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

13.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15.75mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

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Noliktavas stāvoklis patreiz nav pieejams

€ 4,56

€ 0,913 Katrs (Paka ir 5) (bez PVN)

€ 5,52

€ 1,105 Katrs (Paka ir 5) (Ieskaitot PVN)

STMicroelectronics MDmesh M2 N-Channel MOSFET, 7.5 A, 650 V, 3-Pin TO-220 STP10N60M2
Izvēlēties iepakojuma veidu

€ 4,56

€ 0,913 Katrs (Paka ir 5) (bez PVN)

€ 5,52

€ 1,105 Katrs (Paka ir 5) (Ieskaitot PVN)

STMicroelectronics MDmesh M2 N-Channel MOSFET, 7.5 A, 650 V, 3-Pin TO-220 STP10N60M2
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

7.5 A

Maximum Drain Source Voltage

650 V

Series

MDmesh M2

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

85 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

4.6mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

13.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

15.75mm

Minimum Operating Temperature

-55 °C

Produkta apraksts

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt