N-Channel MOSFET, 7 A, 650 V, 3-Pin TO-220 STMicroelectronics STP8N65M5

RS noliktavas nr.: 760-9727Ražotājs: STMicroelectronicsRažotāja kods: STP8N65M5
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

7 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

70 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Typical Gate Charge @ Vgs

15 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.4mm

Width

4.6mm

Transistor Material

Si

Height

15.75mm

Series

MDmesh M5

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Noliktavas stāvoklis patreiz nav pieejams

€ 5,25

€ 1,05 Katrs (Paka ir 5) (bez PVN)

€ 6,35

€ 1,27 Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 7 A, 650 V, 3-Pin TO-220 STMicroelectronics STP8N65M5

€ 5,25

€ 1,05 Katrs (Paka ir 5) (bez PVN)

€ 6,35

€ 1,27 Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 7 A, 650 V, 3-Pin TO-220 STMicroelectronics STP8N65M5
Noliktavas stāvoklis patreiz nav pieejams

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

DaudzumsVienības cenaPer Iepakojums
5 - 20€ 1,05€ 5,25
25 - 45€ 1,00€ 5,00
50+€ 0,939€ 4,70

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

7 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

70 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Typical Gate Charge @ Vgs

15 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.4mm

Width

4.6mm

Transistor Material

Si

Height

15.75mm

Series

MDmesh M5

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Jūs varētu interesēt