N-Channel MOSFET, 60 A, 40 V, 8-Pin PowerPAK SO-8L Vishay SQJA38EP-T1_GE3

RS noliktavas nr.: 188-5120PRažotājs: VishayRažotāja kods: SQJA38EP-T1_GE3
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Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

40 V

Package Type

PowerPAK SO-8L

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

6.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

68 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

4.47mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

5mm

Typical Gate Charge @ Vgs

48.2 nC @ 10 V

Height

1.01mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Izcelsmes valsts

China

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,425

Katrs (tiek piegadats Rulli) (bez PVN)

€ 0,514

Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

N-Channel MOSFET, 60 A, 40 V, 8-Pin PowerPAK SO-8L Vishay SQJA38EP-T1_GE3
Izvēlēties iepakojuma veidu

€ 0,425

Katrs (tiek piegadats Rulli) (bez PVN)

€ 0,514

Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

N-Channel MOSFET, 60 A, 40 V, 8-Pin PowerPAK SO-8L Vishay SQJA38EP-T1_GE3
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

60 A

Maximum Drain Source Voltage

40 V

Package Type

PowerPAK SO-8L

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

6.7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.4V

Maximum Power Dissipation

68 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

4.47mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

5mm

Typical Gate Charge @ Vgs

48.2 nC @ 10 V

Height

1.01mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Izcelsmes valsts

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more