N-Channel MOSFET, 19 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIR462DP-T1-GE3

RS noliktavas nr.: 710-3402Ražotājs: VishayRažotāja kods: SIR462DP-T1-GE3
brand-logo
Skatīt visu MOSFET tranzistori

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

4.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

20 nC @ 10 V, 8.8 nC @ 4.5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

4.9mm

Width

5.89mm

Minimum Operating Temperature

-55 °C

Height

1.04mm

Izcelsmes valsts

China

Produkta apraksts

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,962

Katrs (Paka ir 5) (bez PVN)

€ 1,164

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 19 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIR462DP-T1-GE3
Izvēlēties iepakojuma veidu

€ 0,962

Katrs (Paka ir 5) (bez PVN)

€ 1,164

Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 19 A, 30 V, 8-Pin PowerPAK SO-8 Vishay SIR462DP-T1-GE3
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
5 - 45€ 0,962€ 4,81
50 - 245€ 0,915€ 4,58
250 - 495€ 0,674€ 3,37
500 - 1245€ 0,627€ 3,14
1250+€ 0,558€ 2,79

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

30 V

Package Type

PowerPAK SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

4.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

20 nC @ 10 V, 8.8 nC @ 4.5 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

4.9mm

Width

5.89mm

Minimum Operating Temperature

-55 °C

Height

1.04mm

Izcelsmes valsts

China

Produkta apraksts

N-Channel MOSFET, 30V to 50V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more