Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5.3 A
Maximum Drain Source Voltage
500 V
Series
D Series
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.63mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Transistor Material
Si
Width
4.83mm
Minimum Operating Temperature
-55 °C
Height
9.8mm
Produkta apraksts
N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 46,40
€ 0,928 Katrs (tiek piegadats Rulli) (bez PVN)
€ 56,14
€ 1,123 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
50
€ 46,40
€ 0,928 Katrs (tiek piegadats Rulli) (bez PVN)
€ 56,14
€ 1,123 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
50
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
50 - 95 | € 0,928 | € 4,64 |
100 - 245 | € 0,843 | € 4,22 |
250 - 495 | € 0,79 | € 3,95 |
500+ | € 0,772 | € 3,86 |
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5.3 A
Maximum Drain Source Voltage
500 V
Series
D Series
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.5 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.63mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Transistor Material
Si
Width
4.83mm
Minimum Operating Temperature
-55 °C
Height
9.8mm
Produkta apraksts