Dual N-Channel MOSFET, 1.3 A, 20 V, 6-Pin SOT-363 Vishay SI1922EDH-T1-GE3
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
263 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
1.6 nC @ 8 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
Dual N-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,356
Katrs (Paka ir 50) (bez PVN)
€ 0,431
Katrs (Paka ir 50) (Ieskaitot PVN)
Standarts
50
€ 0,356
Katrs (Paka ir 50) (bez PVN)
€ 0,431
Katrs (Paka ir 50) (Ieskaitot PVN)
Standarts
50
Pirkt iepakojumos
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 50 - 450 | € 0,356 | € 17,80 |
| 500 - 1200 | € 0,263 | € 13,15 |
| 1250 - 2450 | € 0,221 | € 11,05 |
| 2500 - 4950 | € 0,196 | € 9,80 |
| 5000+ | € 0,179 | € 8,95 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
263 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Length
2.2mm
Typical Gate Charge @ Vgs
1.6 nC @ 8 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
2
Height
1mm
Minimum Operating Temperature
-55 °C
Produkta apraksts
Dual N-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products