Tehniskie dokumenti
Specifikācija
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
80 V
Series
TrenchFET
Package Type
PowerPAK SO-8L
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5.99mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Width
5mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Height
1.07mm
Izcelsmes valsts
China
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 19,75
€ 0,79 Katrs (Paka ir 25) (bez PVN)
€ 23,90
€ 0,956 Katrs (Paka ir 25) (Ieskaitot PVN)
Standarts
25
€ 19,75
€ 0,79 Katrs (Paka ir 25) (bez PVN)
€ 23,90
€ 0,956 Katrs (Paka ir 25) (Ieskaitot PVN)
Standarts
25
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
25 - 75 | € 0,79 | € 19,75 |
100 - 475 | € 0,609 | € 15,22 |
500 - 975 | € 0,52 | € 13,00 |
1000+ | € 0,415 | € 10,38 |
Tehniskie dokumenti
Specifikācija
Brand
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
80 V
Series
TrenchFET
Package Type
PowerPAK SO-8L
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
45 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
5.99mm
Typical Gate Charge @ Vgs
33 nC @ 10 V
Width
5mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Height
1.07mm
Izcelsmes valsts
China