N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 Toshiba TK20N60W5,S1VF(S

RS noliktavas nr.: 125-0551Ražotājs: ToshibaRažotāja kods: TK20N60W5,S1VF(S
brand-logo
Skatīt visu MOSFET tranzistori

Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

175 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

165 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.02mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

15.94mm

Typical Gate Charge @ Vgs

55 nC @ 10 V

Height

20.95mm

Forward Diode Voltage

1.7V

Izcelsmes valsts

Japan

Produkta apraksts

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 16,00

€ 3,20 Katrs (Paka ir 5) (bez PVN)

€ 19,36

€ 3,872 Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 Toshiba TK20N60W5,S1VF(S

€ 16,00

€ 3,20 Katrs (Paka ir 5) (bez PVN)

€ 19,36

€ 3,872 Katrs (Paka ir 5) (Ieskaitot PVN)

N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 Toshiba TK20N60W5,S1VF(S
Noliktavas stāvoklis patreiz nav pieejams

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
5 - 20€ 3,20€ 16,00
25 - 45€ 2,90€ 14,50
50+€ 2,65€ 13,25

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

175 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

165 W

Maximum Gate Source Voltage

-30 V, +30 V

Width

5.02mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

15.94mm

Typical Gate Charge @ Vgs

55 nC @ 10 V

Height

20.95mm

Forward Diode Voltage

1.7V

Izcelsmes valsts

Japan

Produkta apraksts

MOSFET N-Channel, TK2x Series, Toshiba

MOSFET Transistors, Toshiba

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more