Silicon N-Channel MOSFET, 3.5 A, 30 V, 3-Pin SOT-23 Toshiba SSM3K329R,LF(T

RS noliktavas nr.: 236-3575Ražotājs: ToshibaRažotāja kods: SSM3K329R,LF(T
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Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.89e+008 Ω

Maximum Gate Threshold Voltage

1V

Number of Elements per Chip

1

Transistor Material

Silicon

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Noliktavas stāvoklis patreiz nav pieejams

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Noliktavas stāvoklis patreiz nav pieejams

€ 0,072

Katrs (Paka ir 50) (bez PVN)

€ 0,087

Katrs (Paka ir 50) (Ieskaitot PVN)

Silicon N-Channel MOSFET, 3.5 A, 30 V, 3-Pin SOT-23 Toshiba SSM3K329R,LF(T
Izvēlēties iepakojuma veidu

€ 0,072

Katrs (Paka ir 50) (bez PVN)

€ 0,087

Katrs (Paka ir 50) (Ieskaitot PVN)

Silicon N-Channel MOSFET, 3.5 A, 30 V, 3-Pin SOT-23 Toshiba SSM3K329R,LF(T
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.89e+008 Ω

Maximum Gate Threshold Voltage

1V

Number of Elements per Chip

1

Transistor Material

Silicon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more