Tehniskie dokumenti
Specifikācija
Channel Mode
Enhancement
Number of Elements per Chip
1
Channel Type
N
Pin Count
3
Minimum Operating Temperature
-55 °C
Transistor Configuration
Single
Forward Diode Voltage
1.5V
Mounting Type
Through Hole
Minimum Gate Threshold Voltage
2V
Maximum Operating Temperature
+150 °C
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Voltage
800 V
Maximum Gate Source Voltage
±30 V
Width
4.6mm
Maximum Continuous Drain Current
4 A
Maximum Power Dissipation
38.7 W
Package Type
ITO-220
Length
10mm
Height
15mm
Maximum Drain Source Resistance
3 Ω
Typical Gate Charge @ Vgs
20 nC @ 10 V
Brand
Taiwan SemiconductorNoliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 3,55
Katrs (Rulli ir 1000) (bez PVN)
€ 4,296
Katrs (Rulli ir 1000) (Ieskaitot PVN)
1000
€ 3,55
Katrs (Rulli ir 1000) (bez PVN)
€ 4,296
Katrs (Rulli ir 1000) (Ieskaitot PVN)
1000
Tehniskie dokumenti
Specifikācija
Channel Mode
Enhancement
Number of Elements per Chip
1
Channel Type
N
Pin Count
3
Minimum Operating Temperature
-55 °C
Transistor Configuration
Single
Forward Diode Voltage
1.5V
Mounting Type
Through Hole
Minimum Gate Threshold Voltage
2V
Maximum Operating Temperature
+150 °C
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Voltage
800 V
Maximum Gate Source Voltage
±30 V
Width
4.6mm
Maximum Continuous Drain Current
4 A
Maximum Power Dissipation
38.7 W
Package Type
ITO-220
Length
10mm
Height
15mm
Maximum Drain Source Resistance
3 Ω
Typical Gate Charge @ Vgs
20 nC @ 10 V
Brand
Taiwan Semiconductor