N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220 STMicroelectronics STP240N10F7
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
DeepGate, STripFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Width
4.6mm
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Transistor Material
Si
Height
15.75mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 150,00
€ 3,00 Katrs (Tubina ir 50) (bez PVN)
€ 181,50
€ 3,63 Katrs (Tubina ir 50) (Ieskaitot PVN)
50
€ 150,00
€ 3,00 Katrs (Tubina ir 50) (bez PVN)
€ 181,50
€ 3,63 Katrs (Tubina ir 50) (Ieskaitot PVN)
50
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
DeepGate, STripFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Width
4.6mm
Number of Elements per Chip
1
Length
10.4mm
Typical Gate Charge @ Vgs
160 nC @ 10 V
Transistor Material
Si
Height
15.75mm
Minimum Operating Temperature
-55 °C
Izcelsmes valsts
China
Produkta apraksts
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products