N-Channel MOSFET, 18 A, 200 V, 3-Pin DPAK STMicroelectronics STD25NF20

RS noliktavas nr.: 165-6596Ražotājs: STMicroelectronicsRažotāja kods: STD25NF20
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

200 V

Series

STripFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.2mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

28 nC @ 10 V

Height

2.4mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Noliktavas stāvoklis patreiz nav pieejams

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Noliktavas stāvoklis patreiz nav pieejams

€ 3 250,00

€ 1,30 Katrs (Rulli ir 2500) (bez PVN)

€ 3 932,50

€ 1,573 Katrs (Rulli ir 2500) (Ieskaitot PVN)

N-Channel MOSFET, 18 A, 200 V, 3-Pin DPAK STMicroelectronics STD25NF20

€ 3 250,00

€ 1,30 Katrs (Rulli ir 2500) (bez PVN)

€ 3 932,50

€ 1,573 Katrs (Rulli ir 2500) (Ieskaitot PVN)

N-Channel MOSFET, 18 A, 200 V, 3-Pin DPAK STMicroelectronics STD25NF20
Noliktavas stāvoklis patreiz nav pieejams

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

200 V

Series

STripFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.2mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.6mm

Typical Gate Charge @ Vgs

28 nC @ 10 V

Height

2.4mm

Minimum Operating Temperature

-55 °C

Izcelsmes valsts

China

Produkta apraksts

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more