Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
76 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.36mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Width
4.67mm
Height
15.21mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Izcelsmes valsts
China
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 2,75
Katrs (Paka ir 2) (bez PVN)
€ 3,328
Katrs (Paka ir 2) (Ieskaitot PVN)
Standarts
2
€ 2,75
Katrs (Paka ir 2) (bez PVN)
€ 3,328
Katrs (Paka ir 2) (Ieskaitot PVN)
Standarts
2
Pirkt iepakojumos
Daudzums | Vienības cena | Per Iepakojums |
---|---|---|
2 - 8 | € 2,75 | € 5,50 |
10 - 98 | € 2,35 | € 4,70 |
100 - 248 | € 1,90 | € 3,80 |
250 - 498 | € 1,80 | € 3,60 |
500+ | € 1,70 | € 3,40 |
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
76 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.36mm
Typical Gate Charge @ Vgs
25 nC @ 10 V
Width
4.67mm
Height
15.21mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Izcelsmes valsts
China