P-Channel MOSFET Transistor, 3.7 A, 8 V, 3-Pin SOT-23 onsemi NTR2101PG
Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
P
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
8 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
960 mW
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
12 nC @ 4.5 V
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.01mm
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P.O.A.
Katrs (tiek piegadats Rulli) (bez PVN)
Industriālais iepakojums (Rullis)
25
P.O.A.
Katrs (tiek piegadats Rulli) (bez PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Rullis)
25
Noliktavas stāvoklis patreiz nav pieejams
Ideate. Create. Collaborate
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Tehniskie dokumenti
Specifikācija
Brand
ON SemiconductorChannel Type
P
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
8 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
960 mW
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
12 nC @ 4.5 V
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.01mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products