onsemi P-Channel MOSFET, 3.7 A, 8 V, 3-Pin SOT-23 NTR2101PT1G
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
8 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
960 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Transistor Material
Si
Length
3.04mm
Typical Gate Charge @ Vgs
12 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.01mm
Produkta apraksts
P-Channel Power MOSFET, 8V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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€ 8,10
€ 0,081 Katrs (tiek piegadats Rulli) (bez PVN)
€ 9,80
€ 0,098 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
100
€ 8,10
€ 0,081 Katrs (tiek piegadats Rulli) (bez PVN)
€ 9,80
€ 0,098 Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Noliktavas stāvoklis patreiz nav pieejams
Industriālais iepakojums (Rullis)
100
Noliktavas stāvoklis patreiz nav pieejams
| Daudzums | Vienības cena | Per Rullis |
|---|---|---|
| 100 - 200 | € 0,081 | € 4,05 |
| 250 - 450 | € 0,078 | € 3,90 |
| 500 - 950 | € 0,076 | € 3,80 |
| 1000+ | € 0,072 | € 3,60 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
3.7 A
Maximum Drain Source Voltage
8 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
960 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Transistor Material
Si
Length
3.04mm
Typical Gate Charge @ Vgs
12 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Width
1.4mm
Minimum Operating Temperature
-55 °C
Height
1.01mm
Produkta apraksts
P-Channel Power MOSFET, 8V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products