N-Channel MOSFET, 3.1 A, 60 V, 3-Pin SOT-23 Nexperia PMV55ENEAR

RS noliktavas nr.: 151-3187Ražotājs: NexperiaRažotāja kods: PMV55ENEAR
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.7V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

8.36 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

1.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

12.7 nC @ 10 V

Height

1mm

Minimum Operating Temperature

-55 °C

Automotive Standard

AEC-Q101

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 0,378

Katrs (Paka ir 25) (bez PVN)

€ 0,457

Katrs (Paka ir 25) (Ieskaitot PVN)

N-Channel MOSFET, 3.1 A, 60 V, 3-Pin SOT-23 Nexperia PMV55ENEAR
Izvēlēties iepakojuma veidu

€ 0,378

Katrs (Paka ir 25) (bez PVN)

€ 0,457

Katrs (Paka ir 25) (Ieskaitot PVN)

N-Channel MOSFET, 3.1 A, 60 V, 3-Pin SOT-23 Nexperia PMV55ENEAR
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
25 - 225€ 0,378€ 9,45
250 - 600€ 0,205€ 5,12
625 - 1225€ 0,20€ 5,00
1250 - 2475€ 0,196€ 4,90
2500+€ 0,191€ 4,78

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.7V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

8.36 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

1.4mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

12.7 nC @ 10 V

Height

1mm

Minimum Operating Temperature

-55 °C

Automotive Standard

AEC-Q101

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more