Tehniskie dokumenti
Specifikācija
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
67 A
Maximum Drain Source Voltage
30 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
8.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
44.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
20.7 nC @ 10 V
Width
6.22mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
2.39mm
Izcelsmes valsts
Korea, Republic Of
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 0,321
Katrs (Rulli ir 25) (bez PVN)
€ 0,388
Katrs (Rulli ir 25) (Ieskaitot PVN)
Standarts
25
€ 0,321
Katrs (Rulli ir 25) (bez PVN)
€ 0,388
Katrs (Rulli ir 25) (Ieskaitot PVN)
Standarts
25
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
25 - 100 | € 0,321 | € 8,02 |
125 - 225 | € 0,315 | € 7,88 |
250 - 475 | € 0,311 | € 7,78 |
500 - 2975 | € 0,307 | € 7,68 |
3000+ | € 0,304 | € 7,60 |
Tehniskie dokumenti
Specifikācija
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
67 A
Maximum Drain Source Voltage
30 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
8.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
44.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.73mm
Typical Gate Charge @ Vgs
20.7 nC @ 10 V
Width
6.22mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
2.39mm
Izcelsmes valsts
Korea, Republic Of