N-Channel MOSFET, 67 A, 30 V, 3-Pin DPAK MagnaChip MDD1501RH

RS noliktavas nr.: 871-4895Ražotājs: MagnaChipRažotāja kods: MDD1501RH
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

67 A

Maximum Drain Source Voltage

30 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

44.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

20.7 nC @ 10 V

Width

6.22mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

2.39mm

Izcelsmes valsts

Korea, Republic Of

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Noliktavas stāvoklis patreiz nav pieejams

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Noliktavas stāvoklis patreiz nav pieejams

€ 0,321

Katrs (Rulli ir 25) (bez PVN)

€ 0,388

Katrs (Rulli ir 25) (Ieskaitot PVN)

N-Channel MOSFET, 67 A, 30 V, 3-Pin DPAK MagnaChip MDD1501RH
Izvēlēties iepakojuma veidu

€ 0,321

Katrs (Rulli ir 25) (bez PVN)

€ 0,388

Katrs (Rulli ir 25) (Ieskaitot PVN)

N-Channel MOSFET, 67 A, 30 V, 3-Pin DPAK MagnaChip MDD1501RH
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Rullis
25 - 100€ 0,321€ 8,02
125 - 225€ 0,315€ 7,88
250 - 475€ 0,311€ 7,78
500 - 2975€ 0,307€ 7,68
3000+€ 0,304€ 7,60

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

67 A

Maximum Drain Source Voltage

30 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

8.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.7V

Maximum Power Dissipation

44.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.73mm

Typical Gate Charge @ Vgs

20.7 nC @ 10 V

Width

6.22mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

Height

2.39mm

Izcelsmes valsts

Korea, Republic Of

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more