P-Channel MOSFET, 9.7 A, 60 V, 3-Pin DPAK Infineon SPD09P06PLGBTMA1

RS noliktavas nr.: 826-9074Ražotājs: InfineonRažotāja kods: SPD09P06PLG
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Specifikācija

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

9.7 A

Maximum Drain Source Voltage

60 V

Series

SIPMOS®

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

14 nC @ 10 V

Width

6.22mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

2.41mm

Produkta apraksts

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Noliktavas stāvoklis patreiz nav pieejams

Lūdzu pārbaudiet vēlreiz vēlāk

Noliktavas stāvoklis patreiz nav pieejams

€ 38,15

€ 0,763 Katrs (Paka ir 50) (bez PVN)

€ 46,16

€ 0,923 Katrs (Paka ir 50) (Ieskaitot PVN)

P-Channel MOSFET, 9.7 A, 60 V, 3-Pin DPAK Infineon SPD09P06PLGBTMA1
Izvēlēties iepakojuma veidu

Standarts

Izvēlēties iepakojuma veidu

Standarts - each

Pieejams komplektos pa 50.

Ražošana -

Pieejams komplektos pa 50.

Ieteicams pasūtot lielos daudzumos. Preces ir iepakotas gatavas ievietošanai iekārtās, kas ļauj uzlabot ražošanas efektivitāti.

50

Pieejams komplektos pa 50
50€ 38,15
100€ 76,30
150€ 114,45
200€ 152,60
250€ 122,25
300€ 146,70
350€ 171,15
400€ 195,60
450€ 220,05
500€ 244,50
550€ 268,95
600€ 293,40
650€ 317,85
700€ 342,30
750€ 366,75

€ 38,15

€ 0,763 Katrs (Paka ir 50) (bez PVN)

€ 46,16

€ 0,923 Katrs (Paka ir 50) (Ieskaitot PVN)

P-Channel MOSFET, 9.7 A, 60 V, 3-Pin DPAK Infineon SPD09P06PLGBTMA1
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Standarts

Izvēlēties iepakojuma veidu

Standarts - each

Pieejams komplektos pa 50.

Ražošana -

Pieejams komplektos pa 50.

Ieteicams pasūtot lielos daudzumos. Preces ir iepakotas gatavas ievietošanai iekārtās, kas ļauj uzlabot ražošanas efektivitāti.

50

Pieejams komplektos pa 50
50€ 38,15
100€ 76,30
150€ 114,45
200€ 152,60
250€ 122,25
300€ 146,70
350€ 171,15
400€ 195,60
450€ 220,05
500€ 244,50
550€ 268,95
600€ 293,40
650€ 317,85
700€ 342,30
750€ 366,75

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
50 - 200€ 0,763€ 38,15
250 - 950€ 0,489€ 24,45
1000 - 2450€ 0,389€ 19,45
2500+€ 0,339€ 16,95

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

9.7 A

Maximum Drain Source Voltage

60 V

Series

SIPMOS®

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

6.73mm

Typical Gate Charge @ Vgs

14 nC @ 10 V

Width

6.22mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

2.41mm

Produkta apraksts

Infineon SIPMOS® P-Channel MOSFETs

The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more