P-Channel MOSFET, 8.8 A, 60 V, 3-Pin DPAK Infineon SPD08P06PGBTMA1
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
8.8 A
Maximum Drain Source Voltage
60 V
Series
SIPMOS®
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
10 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.5mm
Width
6.22mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.3mm
Produkta apraksts
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 5,91
€ 0,591 Katrs (Paka ir 10) (bez PVN)
€ 7,15
€ 0,715 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
€ 5,91
€ 0,591 Katrs (Paka ir 10) (bez PVN)
€ 7,15
€ 0,715 Katrs (Paka ir 10) (Ieskaitot PVN)
Standarts
10
Pirkt iepakojumos
| Daudzums | Vienības cena | Per Iepakojums |
|---|---|---|
| 10 - 90 | € 0,591 | € 5,91 |
| 100 - 240 | € 0,562 | € 5,62 |
| 250 - 490 | € 0,538 | € 5,38 |
| 500 - 990 | € 0,513 | € 5,13 |
| 1000+ | € 0,479 | € 4,79 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
8.8 A
Maximum Drain Source Voltage
60 V
Series
SIPMOS®
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
42 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
10 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.5mm
Width
6.22mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.3mm
Produkta apraksts
Infineon SIPMOS® P-Channel MOSFETs
The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products