Dual SiC N-Channel MOSFET, 131 A, 40 V, 3-Pin PG-TO252-3 Infineon IPD029N04NF2SATMA1
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
131 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 1,10
Katrs (tiek piegadats Rulli) (bez PVN)
€ 1,331
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
5
€ 1,10
Katrs (tiek piegadats Rulli) (bez PVN)
€ 1,331
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
5
Pirkt iepakojumos
| Daudzums | Vienības cena | Per Rullis |
|---|---|---|
| 5 - 45 | € 1,10 | € 5,50 |
| 50 - 120 | € 0,978 | € 4,89 |
| 125 - 245 | € 0,922 | € 4,61 |
| 250 - 495 | € 0,856 | € 4,28 |
| 500+ | € 0,439 | € 2,20 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
131 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products