N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK Infineon IPB64N25S320ATMA1

RS noliktavas nr.: 171-1959PRažotājs: InfineonRažotāja kods: IPB64N25S320ATMA1
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

64 A

Maximum Drain Source Voltage

250 V

Series

OptiMOS™-T

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10mm

Typical Gate Charge @ Vgs

67 nC @ 10 V

Width

10.25mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

4.4mm

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Noliktavas stāvoklis patreiz nav pieejams

€ 5,90

Katrs (tiek piegadats Rulli) (bez PVN)

€ 7,139

Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK Infineon IPB64N25S320ATMA1
Izvēlēties iepakojuma veidu

€ 5,90

Katrs (tiek piegadats Rulli) (bez PVN)

€ 7,139

Katrs (tiek piegadats Rulli) (Ieskaitot PVN)

N-Channel MOSFET, 64 A, 250 V, 3-Pin D2PAK Infineon IPB64N25S320ATMA1
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Rullis
10 - 20€ 5,90€ 29,50
25 - 45€ 5,60€ 28,00
50 - 120€ 5,10€ 25,50
125+€ 4,80€ 24,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

64 A

Maximum Drain Source Voltage

250 V

Series

OptiMOS™-T

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10mm

Typical Gate Charge @ Vgs

67 nC @ 10 V

Width

10.25mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

4.4mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more