Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
64 A
Maximum Drain Source Voltage
250 V
Series
OptiMOS™-T
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10mm
Typical Gate Charge @ Vgs
67 nC @ 10 V
Width
10.25mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
4.4mm
Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 5,90
Katrs (tiek piegadats Rulli) (bez PVN)
€ 7,139
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
10
€ 5,90
Katrs (tiek piegadats Rulli) (bez PVN)
€ 7,139
Katrs (tiek piegadats Rulli) (Ieskaitot PVN)
Industriālais iepakojums (Rullis)
10
Pirkt iepakojumos
Daudzums | Vienības cena | Per Rullis |
---|---|---|
10 - 20 | € 5,90 | € 29,50 |
25 - 45 | € 5,60 | € 28,00 |
50 - 120 | € 5,10 | € 25,50 |
125+ | € 4,80 | € 24,00 |
Tehniskie dokumenti
Specifikācija
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
64 A
Maximum Drain Source Voltage
250 V
Series
OptiMOS™-T
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10mm
Typical Gate Charge @ Vgs
67 nC @ 10 V
Width
10.25mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
4.4mm