N-Channel MOSFET, 50 A, 80 V, 7-Pin MG-WDSON-2 Infineon BSB104N08NP3GXUSA1

RS noliktavas nr.: 214-8967Ražotājs: InfineonRažotāja kods: BSB104N08NP3GXUSA1
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Specifikācija

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

80 V

Package Type

MG-WDSON-2

Series

OptiMOS™

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.0104 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Transistor Material

Si

Number of Elements per Chip

1

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€ 6,57

€ 0,438 Katrs (Paka ir 15) (bez PVN)

€ 7,95

€ 0,53 Katrs (Paka ir 15) (Ieskaitot PVN)

N-Channel MOSFET, 50 A, 80 V, 7-Pin MG-WDSON-2 Infineon BSB104N08NP3GXUSA1
Izvēlēties iepakojuma veidu

€ 6,57

€ 0,438 Katrs (Paka ir 15) (bez PVN)

€ 7,95

€ 0,53 Katrs (Paka ir 15) (Ieskaitot PVN)

N-Channel MOSFET, 50 A, 80 V, 7-Pin MG-WDSON-2 Infineon BSB104N08NP3GXUSA1
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

80 V

Package Type

MG-WDSON-2

Series

OptiMOS™

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.0104 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Transistor Material

Si

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more