IGBTs

IGBT (insulated-gate bipolar transistors) are semiconductors mainly used as switching devices to allow or stop power flow. They have many benefits as a result of being a cross between two of the most common transistors, Bipolar transistors and MOSFET.

What is a typical application of IGBTs?
• Electric motors
• Uninterruptible power supplies
• Solar panel installations
• Welders
• Power converters & inverters
• Inductive chargers
• Inductive cookers

How do IGBT transistors work?
IGBT transistors are three-terminal devices which apply a voltage to a semiconductor, changing its properties to block power flow when it's in the off state and allow power flow in the on state. They are controlled by a metal oxide semiconductor gate structure. IGBT transistors are widely used for switching electrical power in applications such as welding, electric cars, air conditioners, trains and uninterruptible power supplies.

What are the different types of IGBT Transistors?
There are various types of IGBT transistors and they are categorised by parameters such as maximum voltage, collector current, packaging type and switching speed. The type of IGBT transistor you choose will vary depending on the exact power level, and the applications being considered.

What is a difference between MOSFETs and IGBTs?
An IGBTs do have a much lower forward voltage drop compared to a conventional MOSFET in a higher blocking voltage rated devices. However, MOSFETs are characterised by a lower forward voltage at lower current densities due to the absence of diode Vf in the IGBT's output BJT.
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Produkta apraksts Brand Stock Maximum Continuous Collector Current Maximum Collector Emitter Voltage Maximum Gate Emitter Voltage Maximum Power Dissipation Number of Transistors Package Type Mounting Type Channel Type Pin Count Switching Speed Transistor Configuration Length Width Height Dimensions Gate Capacitance Energy Rating Maximum Operating Temperature Minimum Operating Temperature Automotive Standard
ON Semiconductor FGH40T120SQDNL4 P-Channel IGBT, 160 A 1200 V, 4-Pin TO-247 ON Semiconductor 0 160 A 1200 V ±30V 454 W 1 TO-247 Through Hole P 4 - Single 15.8mm 5.2mm 22.74mm 15.8 x 5.2 x 22.74mm 5000pF - +175 °C -55 °C -
ON Semiconductor FGH60T65SQD-F155 P-Channel IGBT, 60 A 650 V, 3-Pin TO-247 G03 ON Semiconductor 0 60 A 650 V ±30V 333 W 1 TO-247 G03 Through Hole P 3 - Single 15.87mm 4.82mm 20.82mm 15.87 x 4.82 x 20.82mm 3813pF 50µJ +175 °C -55 °C -
ROHM RGS00TS65HRC11 IGBT, 50 A 650 V, 3-Pin TO-247N
  • RS noliktavas numurs 186-4264
  • Zīmols ROHM
  • Ražotāja numurs RGS00TS65HRC11
ROHM 0 50 A 650 V ±30V 326 W 1 TO-247N Through Hole N 3 - Single 16mm 5mm 21mm 16 x 5 x 21mm 1568pF - +175 °C -40 °C AEC-Q101
ROHM RGS00TS65HRC11 IGBT, 50 A 650 V, 3-Pin TO-247N
  • RS noliktavas numurs 186-4565
  • Zīmols ROHM
  • Ražotāja numurs RGS00TS65HRC11
ROHM 0 50 A 650 V ±30V 326 W 1 TO-247N Through Hole N 3 - Single 16mm 5mm 21mm 16 x 5 x 21mm 1568pF - +175 °C -40 °C AEC-Q101
N/P-Ch PPAK SC-70 12/20 V 28/54mohms @ 4
  • RS noliktavas numurs 180-7337
  • Zīmols Vishay
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Vishay 11420 - - - - - - - - - - - - - - - - - - - -
P-Ch MOSFET PPAK1212 Cu wire 30V 26mohm
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  • Zīmols Vishay
  • Ražotāja numurs SI7121ADN-T1-GE3
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P-Ch PowerPAK 1212-8 Cu wire 150V 315mo
  • RS noliktavas numurs 180-7314
  • Zīmols Vishay
  • Ražotāja numurs SI7315DN-T1-GE3
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P-Ch PowerPAK SO-8 100V 41mohm @ 10V
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  • Zīmols Vishay
  • Ražotāja numurs SI7489DP-T1-E3
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P-Ch PowerPAK1212 Cu 20V 9 mohm@4.5V
  • RS noliktavas numurs 180-7356
  • Zīmols Vishay
  • Ražotāja numurs SIS407ADN-T1-GE3
Vishay 5100 - - - - - - - - - - - - - - - - - - - -
P channel ;VBRDSS -200 V; RDSon 1500 m
  • RS noliktavas numurs 180-8355
  • Zīmols Vishay
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Vishay 3000 - - - - - - - - - - - - - - - - - - - -
P channel ;VBRDSS -60 V; RDSon 280 mOh
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  • Zīmols Vishay
  • Ražotāja numurs IRFU9024PBF
Vishay 3000 - - - - - - - - - - - - - - - - - - - -
P channel ;VBRDSS -60 V; RDSon 500 mOh
  • RS noliktavas numurs 180-8352
  • Zīmols Vishay
  • Ražotāja numurs IRFU9014PBF
Vishay 3000 - - - - - - - - - - - - - - - - - - - -
Single N-Ch PPAK SC70 30V with Schottky
  • RS noliktavas numurs 180-7339
  • Zīmols Vishay
  • Ražotāja numurs SIA817EDJ-T1-GE3
Vishay 3000 - - - - - - - - - - - - - - - - - - - -
Dual N-Ch PowerPAK SO-8 150V 105mohm @ 1
  • RS noliktavas numurs 180-7324
  • Zīmols Vishay
  • Ražotāja numurs SI7956DP-T1-GE3
Vishay 2995 - - - - - - - - - - - - - - - - - - - -
Dual N-Ch PowerPAK® 1212-8 BWL 30V 25moh
  • RS noliktavas numurs 180-7312
  • Zīmols Vishay
  • Ražotāja numurs SI7216DN-T1-E3
Vishay 2995 - - - - - - - - - - - - - - - - - - - -
N-Ch PowerPAK SO-8 60V 7.5mohm @ 10V- Le
  • RS noliktavas numurs 180-7318
  • Zīmols Vishay
  • Ražotāja numurs SI7478DP-T1-E3
Vishay 2995 - - - - - - - - - - - - - - - - - - - -
N channel ;VBRDSS 100 V; RDSon 270 mOh
  • RS noliktavas numurs 180-8351
  • Zīmols Vishay
  • Ražotāja numurs IRFU120PBF
Vishay 2990 - - - - - - - - - - - - - - - - - - - -
N channel ;VBRDSS 500 V; RDSon 1700 mO
  • RS noliktavas numurs 180-8345
  • Zīmols Vishay
  • Ražotāja numurs IRFR430APBF
Vishay 2990 - - - - - - - - - - - - - - - - - - - -
P-Ch PowerPAK SO-8 BWL 30V 10mohm @ 10V
  • RS noliktavas numurs 180-7311
  • Zīmols Vishay
  • Ražotāja numurs SI7143DP-T1-GE3
Vishay 2990 - - - - - - - - - - - - - - - - - - - -
P-Ch PowerPAK SO-8 BWL 30V 5.5mohm @ 10
  • RS noliktavas numurs 180-7310
  • Zīmols Vishay
  • Ražotāja numurs SI7139DP-T1-GE3
Vishay 2990 - - - - - - - - - - - - - - - - - - - -
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