SiC N-Channel MOSFET, 11.5 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0280090D

RS noliktavas nr.: 915-8842Ražotājs: WolfspeedRažotāja kods: C3M0280090D
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Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

11.5 A

Maximum Drain Source Voltage

900 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

360 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

54 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +18 V

Width

21.1mm

Transistor Material

SiC

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

16.13mm

Typical Gate Charge @ Vgs

9.5 nC @ 15 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

4.8V

Height

5.21mm

Izcelsmes valsts

China

Produkta apraksts

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

MOSFET Transistors, Wolfspeed

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Noliktavas stāvoklis patreiz nav pieejams

€ 5,40

Katrs (Paka ir 2) (bez PVN)

€ 6,534

Katrs (Paka ir 2) (Ieskaitot PVN)

SiC N-Channel MOSFET, 11.5 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0280090D
Izvēlēties iepakojuma veidu

€ 5,40

Katrs (Paka ir 2) (bez PVN)

€ 6,534

Katrs (Paka ir 2) (Ieskaitot PVN)

SiC N-Channel MOSFET, 11.5 A, 900 V, 3-Pin TO-247 Wolfspeed C3M0280090D
Noliktavas stāvoklis patreiz nav pieejams
Izvēlēties iepakojuma veidu

Pirkt iepakojumos

DaudzumsVienības cenaPer Iepakojums
2 - 8€ 5,40€ 10,80
10 - 28€ 5,00€ 10,00
30 - 58€ 4,90€ 9,80
60 - 118€ 4,80€ 9,60
120+€ 4,65€ 9,30

Ideate. Create. Collaborate

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehniskie dokumenti

Specifikācija

Channel Type

N

Maximum Continuous Drain Current

11.5 A

Maximum Drain Source Voltage

900 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

360 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

54 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +18 V

Width

21.1mm

Transistor Material

SiC

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

16.13mm

Typical Gate Charge @ Vgs

9.5 nC @ 15 V

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

4.8V

Height

5.21mm

Izcelsmes valsts

China

Produkta apraksts

Wolfspeed Silicon Carbide Power MOSFETs

Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.

MOSFET Transistors, Wolfspeed

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more