SiC N-Channel MOSFET, 10 A, 1200 V, 3-Pin TO-247 Wolfspeed C2M0280120D
Tehniskie dokumenti
Specifikācija
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
1200 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
370 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
62.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+25 V
Width
21.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
SiC
Length
16.13mm
Typical Gate Charge @ Vgs
20.4 nC @ 20 V
Height
5.21mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
3.3V
Izcelsmes valsts
China
Produkta apraksts
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
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Noliktavas stāvoklis patreiz nav pieejams
Lūdzu pārbaudiet vēlreiz vēlāk
€ 6,60
Katrs (Tubina ir 30) (bez PVN)
€ 7,986
Katrs (Tubina ir 30) (Ieskaitot PVN)
30
€ 6,60
Katrs (Tubina ir 30) (bez PVN)
€ 7,986
Katrs (Tubina ir 30) (Ieskaitot PVN)
30
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Tehniskie dokumenti
Specifikācija
Brand
WolfspeedChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
1200 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
370 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
62.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+25 V
Width
21.1mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
SiC
Length
16.13mm
Typical Gate Charge @ Vgs
20.4 nC @ 20 V
Height
5.21mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
3.3V
Izcelsmes valsts
China
Produkta apraksts
Wolfspeed Silicon Carbide Power MOSFETs
Wolfspeed Z-Fet™, C2M™ & C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency.
MOSFET Transistors, Wolfspeed
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products